| Layer |
Thickness, μm |
Carrier concentration, cm-3 |
Mole-Fraction AlAs |
|
n-GaAlAs(Te) |
15-20 |
>1.0*1018 |
0.10-0.30 |
|
p-GaAlAs(Zn,Ge) |
1.0-2.5 |
5.0*1017 |
0.01-0.02 |
|
p-GaAlAs(Zn) |
130-140 |
5.0*1017 |
0.10-0.15 |
|
p-GaAs(Zn,Ge)* |
25-25 |
(6.0-8.0)*1017 |
0 |
|
p-GaAs(Zn)-sub. |
380-420 |
>8.0*1018 |
0 |
* - only for DH860N type 2
Size
Round (cross-round) D=37-50 mm
Characterics
|
Type |
Material |
Peak wave |
Power |
Forward |
Reverse |
Response |
|||
|
min |
typ. |
typ. |
max |
Tr |
Tf |
||||
|
DH860N type 1 n-side up |
AlGaAs/ |
860 |
0.8 |
1.2 |
1.30 |
1.40 |
8 |
30 |
25 |
|
DH860N type 2 n-side up |
AlGaAs/ |
860 |
1.4 |
1.8 |
1.3 |
1.4 |
8 |
60 |
50 |
* on request by customer.