Structure:

 

Layer

Thickness, μm

Carrier concentration,
cm-3
Mole-Fraction AlAs

n-GaAlAs(Te)

15-20

>1.0.1018

0.10-0.30

p-GaAlAs(Si,Ge)

2.0-3.0

5.0.1017

0.00

p-GaAlAs(Zn)

130-140

>5.0.1017

0.10-0.30

Size

Round (cross-round) D=37-50 mm

Characterics

 

Type

Material
structure/
substrate

Peak wave
length
λp,±10
(±5)*[nm]

Power
at 20mA
P0 [mW]

Forward
voltage
at 20 mA
Uf [V]

Reverse
voltage
at 10 µA
Ur [V] min.

Response
time [ns]

min.

typ.

typ.

max.

Tr

Tf

DDH 900N

AlGaAs/
p-AlGaAs

900

3.0

3.5

 1.35

1.50

8

80

60

* on request by customer