SM Group - DDH(850-870)N IR LED’s Wafers

Structure

Layer	Thickness, μm	Carrier concentration, cm^-3	Mole-Fraction AlAs
n-GaAlAs(Te)	15-20	>1.0^.10¹⁸	0.10-0.30
p-GaAlAs(Zn,Ge)	1.0-2.5	5.0^.10¹⁷	0.01(0.03)*
p-GaAlAs(Zn)	130-140	>5.0^.10¹⁷	0.10-0.30

* DDH850N

Size

Round (cross-round) D=37-50 mm

Characterics

Type	Material structure/ substrate	Peak wave length λ_p,±10 (±5)*[nm]	Power at 20mA P₀ [mW]		Forward voltage at 20 mA U_f [V]		Reverse voltage at 10 µA U_r [V] min.	Response time [ns]
Type	Material structure/ substrate	Peak wave length λ_p,±10 (±5)*[nm]	min	typ.	typ.	max	Reverse voltage at 10 µA U_r [V] min.	Tr	Tf
DDH870N	AlGaAs/ p-AlGaAs	870	3.5	4.3	1.35	1.50	8	40	30
DDH850N	AlGaAs/ p-AlGaAs	850	3.5	4.0	1.40	1.55	8	40	30

* on request by customer.

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