Structure
Layer |
Thickness, μm |
Carrier concentration, cm-3 |
Mole-Fraction AlAs |
n-GaAlAs(Te) |
15-20 |
>1.0.1018 |
0.20(0.55*)-0.60 |
p-GaAlAs(Zn,Ge) |
1.0-2.5 |
5.0.1017 |
0.08-0.16 |
p-GaAlAs(Zn) |
130-140 |
>5.0.1017 |
0.27-0.55 |
* DDH770N
Size
Round (cross-round) D=37-50 mm
Characterics
Type |
Material |
Peak wave |
Power |
Forward |
Reverse |
Response |
|||
min |
typ. |
typ. |
max |
Tr |
Tf |
||||
DDH770N |
AlGaAs/ |
770 |
3.5 |
4.0 |
1.50 |
1.70 |
8 |
40 |
30 |
DDH810N |
AlGaAs/ |
810 |
3.8 |
4.5 |
1.45 |
1.65 |
8 |
40 |
30 |
* on request by customer.