Structure
Layer |
Thickness, μm |
Carrier concentration, cm-3 |
Mole-Fraction AlAs |
p-GaAlAs(Zn) |
10-15 |
>2.0.1018 |
0.60-0.65 |
p-GaAlAs(Zn) |
1.5-2.5 |
5.0.1017 |
0.35 |
n-GaAlAs(Te) |
120-130 |
>5.0.1017 |
0.60-0.65 |
Size
Round (cross-round) D=37-40 mm
Characterics
Type |
Material |
Peak wave |
Power |
Forward |
Reverse |
Response |
|||
min |
typ. |
typ. |
max |
Tr |
Tf |
||||
DDH 660P |
AlGaAs/ |
660 |
18 |
20 |
1.90 |
1.95 |
>8 |
50 |
35 |
* on request by customer.