Structure

Layer

Thickness, μm

Carrier concentration,
cm-3
Mole-Fraction AlAs

p-GaAlAs(Zn)

10-15

>2.0.1018

0.60-0.65

p-GaAlAs(Zn)

1.5-2.5

5.0.1017 

0.35

n-GaAlAs(Te)

120-130

>5.0.1017

0.60-0.65

Size

Round (cross-round) D=37-40 mm

Characterics

Type

Material
structure/
substrate

Peak wave
length
λp,±10
(±5)*[nm]

Power
at 20mA
P0 [mW]

Forward
voltage
at 20 mA
Uf [V]

Reverse
voltage
at 10 µA
Ur [V] min.

Response
time [ns]

min

typ.

typ.

max

Tr

Tf

DDH 660P

AlGaAs/
n-AlGaAs

660

18

20

 1.90

1.95

>8

50

35

* on request by customer.